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2SK3685-01
FUJI POWER MOSFET
200309
N-CHANNEL SILICON POWER MOSFET
Outline Drawings [mm]
Super FAP-G Series
Features
High speed switching No secondary breadown Avalanche-proof Low on-resistance Low driving power
Applications
Switching regulators DC-DC converters UPS (Uninterruptible Power Supply)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Non-Repetitive Maximum avalanche current Non-Repetitive Maximum avalanche energy Maximum Drain-Source dV/dt Peak diode recovery dV/dt Max. power dissipation Operating and storage temperature range Symbol Ratings VDS 500 VDSX 500 ID 19 ID(puls] 76 VGS 30 IAS 19 EAS dVDS/dt dV/dt PD Tch Tstg 245.3 20 5 2.50 235 +150 -55 to +150 Unit V V A A V A mJ kV/s kV/s W C C Remarks VGS=-30V
Tch<150C = L=1.25mH VCC=50V *2 VDS< 500V = *3 Ta=25C Tc=25C
Equivalent circuit schematic
Drain(D)
Gate(G) Source(S)
*2 See to Avalanche Energy Graph *3 IF < -ID, -di/dt=50A/s, VCC < BVDSS, Tch < 150C = = =
Electrical characteristics (Tc =25C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Total Gate Charge Gate-Source Charge Gate-Drain Charge Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD IAV VSD trr Qrr Test Conditions ID= 250A VGS=0V ID= 250A VDS=VGS VDS=500V VGS=0V VDS=400V VGS=0V VGS=30V VDS=0V ID=9.5A VGS=10V ID=9.5A VDS=25V VDS=25V VGS=0V f=1MHz VCC=300V ID=9.5A VGS=10V RGS=10 VCC=250V ID=19A VGS=10V L=1.25mH Tch=25C IF=19A VGS=0V Tch=25C IF=19A VGS=0V -di/dt=100A/s Tch=25C Tch=25C Tch=125C
Min.
500 3.0
Typ.
Max.
5.0 25 250 100 0.38
Units
V V A nA S pF
10 0.29 7.5 15 1560 2340 230 345 8 12 29 43.5 13 19.5 56 84 8 12 34 51 13 19.5 10 15 19 1.20 1.50 0.57 7.0
ns
nC
A V s C
Thermalcharacteristics
Item Thermal resistance Symbol Rth(ch-c) Rth(ch-a) Test Conditions channel to case channel to ambient
Min.
Typ.
Max.
0.532 50.0
Units
C/W C/W
1
2SK3685-01
Characteristics
Allowable Power Dissipation PD=f(Tc)
400
50
FUJI POWER MOSFET
Typical Output Characteristics ID=f(VDS):80 s pulse test,Tch=25 C
40
300
20V 10V 8V 30
PD [W]
200
ID [A]
7V 20
100
10
6.5V
VGS=6.0V
0 0 25 50 75 Tc [C] 100 125 150
0 0 4 8 12 VDS [V] 16 20 24
Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C
100 100
Typical Transconductance gfs=f(ID):80 s pulse test,VDS=25V,Tch=25 C
10
10
ID[A]
1 1
0.1 0.1 0 1 2 3 4 5 VGS[V] 6 7 8 9 10 0.1 1 ID [A] 10 100
gfs [S]
1.0 0.9 0.8 0.7
Typical Drain-Source on-state Resistance RDS(on)=f(ID):80 s pulse test,Tch=25 C
1.0 VGS=6V 6.5V 0.9 7V 0.8 0.7 0.6 0.5 0.4
Drain-Source On-state Resistance RDS(on)=f(Tch):ID=9.5A,VGS=10V
RDS(on) [ ]
0.6 8V 0.5 0.4 0.3 0.2 0.1 0.0 0 10 20 ID [A] 30 40 10V 20V
RDS(on) [ ]
max.
typ. 0.3 0.2 0.1 0.0 -50 -25 0 25 50 Tch [C] 75 100 125 150
2
2SK3685-01
FUJI POWER MOSFET
Gate Threshold Voltage vs. Tch VGS(th)=f(Tch):VDS=VGS,ID=250A
7.0 6.5 6.0 5.5 5.0 max.
Typical Gate Charge Characteristics VGS=f(Qg):ID=19A,Tch=25 C
14
12 Vcc= 100V 10 250V 400V 8
VGS(th) [V]
4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 Tch [C] 100 125 150 0 0 10 2 4 min.
VGS [V]
6
20
30 Qg [nC]
40
50
60
Typical Capacitance C=f(VDS):VGS=0V,f=1MHz
10
4
Typical Forward Characteristics of Reverse Diode IF=f(VSD):80 s pulse test,Tch=25 C
100
Ciss 10
3
10
C [pF]
10
2
Coss
IF [A]
1 10
3
10
1
Crss
10
0
10
0
10
1
10
2
0.1 0.00 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 VSD [V]
VDS [V]
10
3
Typical Switching Characteristics vs. ID t=f(ID):Vcc=300V,VGS=10V,RG=10
Maximum Avalanche Energy vs. starting Tch E(AV)=f(starting Tch):Vcc=50V,I(AV)<=19A
700
600
IAS=8A
500
10
2
td(off)
400 t [ns]
td(on)
IAS=12A
EAV [mJ]
300 IAS=19A
10
1
tr
tf
200
100
10
0
0
10
-1
10
0
10 ID [A]
1
10
2
0
25
50
75 starting Tch [C]
100
125
150
3
2SK3685-01
FUJI POWER MOSFET
10
2
Maximum Avalanche Current Pulsewidth IAV=f(tAV):starting Tch=25C,Vcc=50V
Single Pulse
Avalanche Current I AV [A]
10
1
10
0
10
-1
10
-2
10
-8
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
tAV [sec]
Maximum Transient Thermal Impedance Zth(ch-c)=f(t):D=0
10
1
10
0
Zth(ch-c) [C/W]
10
-1
10
-2
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t [sec]
http://www.fujielectric.co.jp/denshi/scd/
4

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